Semiconductor Device

ABSTRACT

An object of the invention is to manage variation of electrical characteristics of an element in a semiconductor device due to a vapor deposition process by measuring electrical characteristics of a TEG. A substrate  100  of an active matrix EL panel includes a vapor deposition region  101  having a film formed by a vapor deposition method. In the vapor deposition region  101 , a pixel region  102  is provided. A TEG  109  is provided in the vapor deposition region  101  having a film formed in a vapor deposition step and outside of the pixel region  102 . A measurement terminal portion 110 for measuring the TEG  109  is provided outside of a sealing region  103.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device manufacturedthrough a process of forming a film by a vapor deposition method.

2. Description of the Related Art

In recent years, a liquid crystal display device and anelectro-luminescence (hereinafter referred to as EL) display device, ineach of which transistors, specifically, thin film transistors(hereinafter referred to as TFTs) or MOS transistors are formed over onesubstrate, have been developed. These display devices are formed byproviding a transistor formed over a glass substrate by a thin-filmformation technique in each of pixels arranged in matrix, therebyfunctioning to display an image.

A Test Element Group (hereinafter referred to as TEG) for testingcharacteristics of a thin film transistor arranged in a pixel isprovided in a region other than that of the pixel, over a substrate (seePatent Document 1).

[Patent Document 1] Japanese Published Patent Application No.2004-341216 SUMMARY OF THE INVENTION

In an EL display device, a TFT is formed in a pixel first, and then alight emitting element is formed. Therefore, an effect to the TFT due toformation of the light emititng element needs to be tested. However,since a TEG of Patent Document 1 is provided outside of a region where afilm is formed through a vapor deposition process, it is impossible totest variation of characteristics of the TFT due to formation of thelight emitting element.

A vapor deposition method is used for forming a conductive film to be anelectrode of an EL element or a film to be a light emitting layer;however, a defect may be caused in a threshold voltage (Vth) of a TFT orsubthreshold characteristics before or after a vapor deposition process.The defect is caused because a gate insulating film is damaged byradiation generated in the vapor vepositon process, whereby a charge anda level are generated in the gate insulating film, and thus the TFT isdeteriorated. Therefore, a TEG capable of testing electricalcharacteristics of a TFT in a pixel before or after a vapor depositionprocess is required.

An object of the invention is to manage variation of electricalcharacteristics of an element in a semiconductor device due to a vapordeposition process by measuring electrical characteristics of a TEG.

Further, electrical characteristics of a TFT may vary over time becausethe TFT keeps to operate. The electrical characteristics vary also dueto temperature. Therefore, a display device that normally operates atroom temperature cannot operate normally at high temperature or lowtemperature in some cases. Even after a pixel region is sealed, it isdesired that the electrical characteristics of the TFT in the pixelregion be managed.

An object of the inveniton is to provide a semiconductor device capableof measuring electrical characeristics of a TEG even after the pixelregion is sealed.

One mode of the invention is a semiconductor device including asubstrate defining a first region and a second region including a pixelprovided in the first region; an element provided in the second region;a test element group for testing the element in the second region, whichis provided in the first region outside of the second region; and atleast one terminal which is provided outside of the first region, andelectrically connected to the test element group.

The aforementioned mode of the invention is the semiconductor deviceincluding a substrate defining a vapor deposition region (also referredto as a first region) having a film formed by a vapor deposition methodand a pixel region (also referred to as a second region) provided in thevapor deposition region; an element provided in the pixel region; a testelement group for testing the element in the pixel region, which isprovided in the vapor deposition region outside of the pixel region; andat least one terminal which is provided outside of the vapor depositionregion, and electrically connected to the test element group.

Another mode of the invention is a semiconductor device including asubstrate defining a vapor deposition region having a film formed by avapor deposition method and a pixel region provided in the vapordeposition region; a pixel provided in the pixel region; a test elementgroup for testing the element in the pixel region, which is provided inthe vapor deposition region outside of the pixel region; and at leastone terminal which is provided outside of the vapor deposition regionand electrically connected to the test element group. The pixel has afirst pixel circuit and a light emitting element connected to the firstpixel circuit; the test element group has a second pixel circuit whichis the same as the first pixel circuit; and at least one element of thesecond pixel circuit is electrically connected to the terminal.

Another mode of the invention is a semiconductor device including apixel region including a first pixel circuit which has a firsttransistor, a second transistor, a gate signal line, a data signal line,and a power source line; and a light emitting element connected to thefirst pixel circuit. In the first pixel circuit, the first transistorhas a gate connected to the gate signal line, and one of a source and adrain connected to the data signal line; and the second transistor has asource and a drain of which one is connected to the power source lineand the other is connected to the light emitting element. A test elementgroup has a second pixel circuit which is the same as the first pixelcircuit. In the second pixel circuit, at least one of the firsttransistor and the second transistor is electrically connected to theterminal; and a gate signal line is electrically connected to the gatesignal line of the first pixel circuit through a switch.

Another mode of the invention is a semiconductor device including asubstrate defining a vapor deposition region having a film formed by avapor deposition method and a pixel region provided in the vapordeposition region; a pixel provided in the pixel region; a test elementgroup for testing an element in the pixel region, which is provided inthe vapor deposition region outside of the pixel region; and at leastone terminal which is provided outside of the vapor deposition regionand electrically connected to the test element group. The pixel includesa first pixel circuit having a first transistor, a second transistor, agate signal line, a data signal line, and a power source line; and alight emitting element connected to the first pixel circuit. In thefirst pixel circuit, the first transistor has a gate connected to thegate signal line, and a source and a drain of which one is connected tothe data signal line and the other is connected to a gate of the secondtransistor; and the second transistor has a source and a drain of whichone is connected to the power source line and the other is connected tothe light emitting element. The test element group has a second pixelcircuit which is the same as the first pixel circuit. In the secondpixel circuit, at least one of the first transistor and the secondtransistor is electrically connected to the terminal; and a certainpotential of a gate signal line of the second pixel circuit ismaintained.

In the invention, a second pixel circuit of the test element group isthe same as the first pixel circuit in a pixel region. This means thatthe invention includes a circuit to which a change is added in order toelectrically connect an element in the pixel circuit of the test elementgroup to a terminal. Further, a plurality of the second pixel circuitscan be provided in matrix in the test element group.

In the invention, when a transistor provided in a pixel region istested, the transitsor is provided in the test element group. Meanwhile,when a capacitor provided in a pixel region is tested, the capacitor isprovided in the test element group.

Further, a semiconductor device of the invention includes anothersubstrate, which is fixed by a sealing material so as to face thesubstrate to seal the vapor deposition region. The terminal is providedoutside of a region sealed by the another substrate and the sealingmaterial.

As for a transitsor applicable to the invention, a material of asemiconductor in a channel formation region is not limited. For example,the following semiconductors are given: a non-single crystallinesemiconductor film typified by amorphous silicon and polycrystallinesilicon; a monocrystalline semiconductor film which is formed using asemiconductor substrate or an SOI substrate; an organic semiconductor;and a carbon nanotube. Further, a substrate over which a pixel regionand a test element group are provided and a substrate used for sealingare not limited to a particular type. For example, a glass substrate ora plastic substrate can be used.

In the invention, the test element group (TEG) is provided in the vapordeposition region, whereby electrical characteristics of an element inthe pixel region can be measured quantitively before or after vapordeposition from a measurement result of the TEG. For example, the vapordeposition process is conducted using the measurement result, whereby asemiconductor device to be a defective can be guessed before the vapordeposition. By thus measuring the TEG before the vapor deposition, asubstrate which may be a defective does not need to be subjected toprocesses after the vapor deposition process. Therefore, unnecessaryvapor deposition can be avoided and cost reduction can be achieved.

In the invention, the electrical characteristics of the TEG can bemeasured even after the vapor deposition region is sealed. Therefore,variation in the electrical characteristics of the TFT at hightemperature or at low temperature can be measured quantitatively aftersealing from a measurement result of the TEG. Thus, variation inelectrical characteristics of the element in the pixel region due totemperature can be managed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view showing an EL panel of Embodiment Mode 1.

FIGS. 2A to 2D are plan views showing layouts of a TEG of EmbodimentMode 1 and FIGS. 2E and 2F are cross sectional views thereof.

FIGS. 3A to 3D are equivalent circuit diagrams of FIGS. 2A to 2F.

FIG. 4A is a top plan view showing a layout of Embodiment Mode 1, FIG.4B is a cross sectional view thereof, and FIG. 4C is an equivalentcircuit diagram thereof.

FIG. 5 is an equivalent circuit diagram of a pixel circuit including adummy pixel.

FIG. 6 is a view showing an EL panel of Embodiment Mode 2.

FIG. 7 is a view showing an EL panel of Embodiment Mode 3.

FIG. 8 is a view showing an EL panel of Embodiment Mode 4.

FIG. 9 is a view showing an EL panel of Embodiment Mode 5.

FIGS. 10A to 10F are views showing electronic appliances to which theinvention is applied.

DETAILED DESCRIPTION OF THE INVENTION

Although the invention will be fully described by way of embodimentmodes and an embodiment with reference to the accompanying drawings, itis to be understood that various changes and modifications will beapparent to those skilled in the art. Therefore, unless such changes andmodifications depart from the spirit and the scope of the invention,they should be construed as being included therein.

Further, in this specification, a source and a drain of the TFT arenames adopted for convenience to distinguish electrodes except a gate ina structure of the TFT. In the invention, in a case of a structure wherea polartity of the TFT is not limited, names of a source and a drainchanges when the polarity is considered. Therefore, a source or a drainmay be described as one of one electrode and the other electrode.

Embodiment Mode 1

In this embodiment mode, an example of applying a semiconductor deviceto an active EL panel is described. FIG. 1 shows a front view of an ELpanel of this embodiment mode.

A substrate 100 includes a vapor deposition region 101, a pixel region102 provided inside of the vapor deposition region 101, and a sealingregion 103 surrounding the vapor deposition region 101. In the pixelregion 102, a plurality of light emitting elements and pixels providedwith a pixel circuit electrically connected to the light emittingelement are provided in matrix. The pixel circuit is formed of atransistor, a capacitor, and the like, and a specific example thereof isdescribed in Embodiment Mode 2.

In the vapor deposition region 101 including the pixel region 102, aflim is formed by a vapor deposition method when a light emittingelement of a pixel is formed. The sealing region 103 is provided with asealing material. A substrate 105 for sealing is fixed to the subsrate100 by the sealing material, and it is airtight between the substrates100 and 105. In other words, the vapor deposition region 101 is sealedby the substrate 105 and the sealing material.

In the substrate 100, the sealing region 103 is provided with a datasignal line driver circuit 106 and a gate signal line driver circuit107. Transistors in the pixel region 102, the data signal line drivercircuit 106, and the gate signal line driver circuit 107 are formed ofTFTs. Although the data signal line driver circuit 106 and the gatesignal line driver circuit 107 are provided over the substrate 100 withthe pixel region 102, they may be provided a substrate other than thesubstrate 100.

A terminal portion 108 in which a plurality of terminals for externallyinputting a signal and a power source to the data signal line drivercircuit 106, the gate signal line driver ciurcit 107, a pixel circuit,and the like are arranged is provided for one side of the substrate 100.The termial portion 108 is provided outside of the sealing region 103 soas not to be covered with the substrate 105. In FIG. 1, only a terminalof the terminal portion 108, which is connected to the data signal linedriver circuit 106, is shown.

In the substrate 100, the vapor deposition region 101 except the pixelregion 102 is provided with a TEG 109 for inspecting an element such asa transistor or a capacitor in the pixel region 102. The TEG 109 isconnceted to a measurement terminal provided in a measurement terminalportion 110. The measurement terminal poriton 110 is provided outside ofthe sealing poriton 103 similarly to the terminal portion 108. Thus, TEG109 can be measured even after being formed to be a module or a product.The measurement terminal poriton 110 is provided so as not to be coveredby the substrate 105, so that the TEG 109 can easily be measured.

The TEG 109 is formed simultaneously in the same process as a TFT formedin the pixel region 102, the data signal line driver circuit 106, andthe gate signal line driver circuit 107. After the TEG 109 and a TFT inthe pixel region 102 and the like are formed, a light emitting elementis formed in the pixel region 102. When the light emitting element isformed, an EL layer and the like are formed in the vapor depositionregion 101 by a vapor deposition method. Therefore, the TEG 109 is alsoaffected together with a TFT formed in the pixel region 102 by the vapordeposition process. Thus, electrical characteristics of the TFT 109 aremeasured before or after the vapor deposition process, therebymonitoring an effect to the TFT formed in the pixel region 102 due tothe vapor deposition process.

A structure of the TEG 109 is described with reference to FIGS. 2A to2F. Note that reference numerals in FIGS. 3A to 3D are the same as thosein FIGS. 2A to 2F. FIGS. 2A to 2F show an example in which a transistoris formed as the TEG 109. The TEG 109 in FIGS. 2A to 2D is referred toas a transistor TEG for convenience.

FIGS. 2A and 2B are top plan views of the transitsor TEG 109. FIG. 2E isa cross sectional view taken along a line A-A′ in FIG. 2A. FIG. 2F is across sectional view taken along a line B-B′ in FIG. 2B. In addition,FIGS. 3A to 3D show equivalent circuits of FIGS. 2A to 2D, respectively.

The transistor TEG 109 in FIGS. 2A and 2B is a TFT having a top gatestructure where a gate insulating film 202 and a gate electrode 203 arestacked over a semiconductor layer 201. The semiconductor layer 201 isprovided with a channel formation region, a source region, and a drainregion. The TEG 109 in FIG. 2A is an n-channel TFT where a quinquevalentimpurity such as phosphorus is injected into the source region and thedrain region, and also a TFT which has a multigate structure (alsoreferred to as a multichannel structure) including a plurality ofchannel formation regions (FIG. 3A). On the other hand, the TEG 109 inFIG. 2B is a p-channel TFT where a trivalent impurity such as boron isinjected into the source region and the drain region, and also a TFTwhich has a single-gate structure including one channel formation region(FIG. 3B).

Three terminals of the transistor TEG 109 are electrically connected towirings 205, 206, and 207, respectively. The gate electrode 203 which isa first termial is connected to the wiring 205 through a contact holeformed in the insulating layer 204. One of a second terminal and a thirdterminal corresponds to a source, and the other corresponds to a drain.The second terminal and the third terminal are electrically connected tothe wiring 206 and the wiring 207 through contact holes formed in theinsulating layer 204 and the gate insulatin layer 202 respectively. Thewirings 205, 206, and 207 are led in the vapor deposition region 101 andpulled to outside of the sealing region 103 to be electrically connectedto measurement terminals 208, 209, and 210 of the measurement terminalportion 110. Here, an example where the same conductive film ispatterned to form the wirings 205, 206, and 207, and the measurementterminals 208, 209, and 210 is shown; however, each of them may beformed from a different conductive film.

Although FIGS. 2A and 2B show an example in which one measurementterminal is connected to one terminal of the TEG 109, a plurality ofmeasurement terminals may be connected to one terminal of the TEG 109.One mode is shown in FIGS. 2C and 2D. FIGS. 2C and 2D are transforms ofFIGS. 2A and 2B, respectively. Wirings 211 and 212 each diverging in twodirections are used instead of the wirings 206 and 207. The secondterminal is electrically connected to measurement terminals 213 and 214through the wiring 211. The third terminal is electrically connected tothe measurement terminals 215 and 216 through the wiring 212.

The wirings 211 and 212 are each diverged in two directions to bedivided into a passage for measuring current characteristics and apassage for measuring voltage characteristics, and the transistor TEG109 is connected to the measurement terminal portion 110. Therefore,wiring resistance can be ignored, and electrical characteristics of thetransitsor TEG 109 can be measured more accurately.

A structure of the transistor TEG 109 is not limited to that shown inFIGS. 2A to 2F. Conductivity, a structure of the gate electrode (asingle gate structure or a multigate structure), a structure of the TFT(a bottom gate structure, a top gate structure, or a dual gate structurein which gate electrodes are over and under the channel formationregion), presence of an LDD region, and the like of the transitsor TEG109 may be appropriately selected. In order to conduct a test moreaccurately, the transitsor TEG 109 preferably has the same structure andthe same size as a TFT formed in the pixel region 102.

The transistsor TEG 109 may have such a structure that a damage isintentionally given thereto by the vapor deposition process. Forexample, there are a method by which a wiring led over the transistorTEG 109 is removed, and the like.

Another mode of the TEG 109 is described with reference to FIGS. 4A to4C. FIGS. 4A to 4C show an example in which a capacitor is formed as theTEG 109. For convenience, the TEG 109 in FIGS. 4A to 4C is referred toas a capacitor TEG 109. FIG. 4A shows a top plan view of the capacitorTEG 109. FIG. 4B is a cross sectional view taken along a line A-A′ inFIG. 4A. FIG. 4C shows an equivalent circuit of FIG. 4A. In FIGS. 4A to4C, the same elements are denoted by the common reference numerals.

The capacitor TEG 109 has a structure in which a gate insulating film402 and a gate electrode 403 are stacked over a semiconductor layer 401.Further, the capacitor TEG 109 is formed at the same time as the TFT inthe pixel region 102. The semiconductor layer 401, the gate insulatingfilm 402, and the gate electrode 403 are formed when the semiconductorlayer, the gate insulating film, and the gate electrode of the TFT inthe pixel region 102 are formed, respectively. In order to conduct atest more accurately, the capacitor TEG 109 preferably has the samestructure and the same size as a capacitor formed in the pixel region102.

In a region of the semiconductor layer 401, which is not covered withthe gate electrode 403, a trivalent impurity such as boron is added toform an impurity region having P-type conductivity. Needless to say, aquinquevalent impurity may be added to form an N-type impurity region. AP-type impurity region of the semiconductor layer 401 functions as oneelectrode (first terminal) of the capacitor, and the gate electrode 403functions as the other electrode (second terminal).

The gate electrode 403 is connected to a wiring 406 through a contacthole formed in the insulating layer 404. The P-type impurity region ofthe semiconductor layer 401 is electrically connected to a wiring 405through contact holes formed in the insulating layer 404 and the gateinsulating layer 402. The wirings 405 and 406 are led to outside of thevapor deposition region 101 to be electrically connected to measurementterminals 408 and 409 of the measurement terminal portion 110. Here, anexample where the same conductive film is patterned to form the wiring405 and a measurement terminal 407, and the wiring 406 and themeasurement terminal 408 respectively; however, each of them may beformed from a different conductive film.

Another mode of the capacitor TEG is described. In order to measureparasitic capacitance of the wirings 405 and 406 which are led outsideof the sealing region 103 from the capacitor TEG 109 in FIG. 4A, thesame wirings as the wirings 405 and 406 are additionally formed over thesubstrate 100 and connected to a terminal of the measurement terminalportion 110. Then, parasitic capacitance of the additionally formedwiring is measured and subtracted from a capacitance value measured bythe capacitor TEG 109. From this value, the value of charge storagecapacitance of the capacitor in the pixel region 102 can be obtainedmore accurately.

Embodiment Mode 2

In an active matrix EL panel, pixels are arranged in matrix. A pixelcircuit of an active matrix EL panel is described with reference to FIG.5. The pixel circuit is formed of a data signal line 501, a gate signalline 502, a power source line 503, a TFT 504, a TFT 505, and a chargestorage capacitor 506.

The data signal line 501 is connected to the data signal line drivercircuit 106. The gate signal line 502 is connected to the gate signalline driver circuit 107. The power source line 503 is connected to apower source.

The TFT 504 has a gate connected to the gate signal line 502, and asource and a drain of which one is connected to the data signal line 501and the other is connected to a gate of the TFT 505 and one electrode ofthe capacitor 506. One of a source and a drain of the TFT 505, and theother electrode of the capacitor 506 are connected to the power sourceline 503. In some cases, the TFT 504 and the TFT 505 are referred to asa select TFT and a driving TFT, respectively.

An electrode 505 a (corresponding to a source or a drain) of the TFT 505of a pixel 511 and a pixel 512 which are provided in the pixel region102 is connected to a light emitting element 507 typified by an organicEL element and an inorganic EL element. On the other hand, the electrode505 a of the TFT 505 of a pixel 513 and a pixel 514 which are providedin the pixel region 101 outside of the pixel region 102 is not connectedto the light emitting element 507. Thus, a potential of the electrode505 a of the TFT 505 is not fixed and is in a floating state.

In this specification, pixels which do not function substantially suchas the pixels 513 and 514 are referred to as dummy pixels forconvenience. As shown in FIG. 5, a dummy pixel may be provided in thepixel region 102 of the active matrix EL panel. In this embodiment mode,such a dummy pixel is used for a TEG for inspecting a pixel formed inthe pixel region 102.

The TEG of this embodiment mode is described with reference to FIG. 6.As shown in FIG. 6, the TEG 109 including dummy pixels of n rows and mcolumns (two rows and two columns in FIG. 6) is provided in the vapordeposition region 101 outside of the pixel region 102. A pixel circuitof the dummy pixel includes a data signal line 601, a gate signal line602 intersecting with the data signal line 602, a power source line 603,a TFT 604, a TFT 605, and a capacitor 606.

In the pixel circuit, the TFT 604 has a gate connected to the gatesignal line 602, and a source and a drain of which one is connected tothe data signal line 601 and the other is connected to a gate electrodeof the TFT 605 and one electrode of the capacitor 606. One of a sourceand a drain of the TFT 605 is connected to the power source line 603,and the other has a potential which is not fixed and in a floatingstate. Further, one electrode of the capacitor 606 is connected to oneof the source and the drain of the TFT 604, and the other electrode ofthe capacitor 606 is connected to the power source line 603. It isneedless to say that the pixel circuit provided in the pixel region 102is the same circuit as that of the dummy pixel shown in FIG. 6, and theelectrode of the TFT 605 in a floating state is connected to a lightemitting element.

Further, in the dummy pixel of the TEG 109, the data signal line 601,the gate signal line 602, and the power source line 603 are dummywirings which are provided virtually, and a signal or a potential is notsupplied thereto from outside. In other words, the wirings 601, 602, and603 are not connected to a wiring, an electrode, a terminal, and thelike which are outside of the TEG 109.

In this embodiment mode, the TFT 604 and the TFT 605 of one of dummypixels (a dummy pixel of the first row and the first column in thefigure) of the TEG 109 are connected to the measurement terminalprovided in the measurement terminal portion 110. The gate, the source,and the drain of the TFTs 604 and 605 are connected to a differentmeasurement terminal of the measurement terminal portion 110 through awiring led to the measurement terminal portion 110 provided outside ofthe sealing region 103, respectively.

Note that in the dummy pixel connected to the measurement terminal,terminals of the TFT 604, which are connected to the data signal line601 and the gate signal line 602, are connected to only the measurementterminal. A terminal of the TFT 605, which is connected to the TFT 604,is connected to only the measurement terminal.

Further, electrical characteristics can be measured ignoring wiringresistance by connecting the TFTs 604 and 605 to the measurementterminal portion 110 as shown in FIGS. 3C and 3D, which is preferable.

Although the TFTs 604 and 605 of the TEG 109 are measured in FIG. 6, thecapacitor 606 may be measured as described in Embodiment Mode 1. Inaddition, a position of the dummy pixel to be measured is not limited tothe first row and the first column. Further, increasing the number ofterminals in the measurement terminal portion 110 makes it possible tomeasure elements of a plurality of dummy pixels.

In this embodiment mode, an element in a circuit equivalent to the pixelcircuit in the pixel region 102 can be measured by using the dummy pixelfor the TEG 109. Therefore, electrical characteristics of a transistorin the pixel region 102 can be measured more accurately by using the TEGof this embodiment mode as compared to a TEG formed of one transistor.

Pixel circuits of a pixel and a dummy pixel of this embodiment mode areone example, and is not limited to FIG. 6. There may be two or more TFTsor a plurality of gate signal lines. The pixel circuit includes at leasta data signal line, a gate signal: line, a power source line, a selectTFT, and a driving TFT, as shown in FIGS. 5 and 6. A charge storagecapacitor may be provided as needed. This is the same for EmbodimentModes 3 to 5 described below.

Embodiment Mode 3

In this embodiment mode, description is made of an example of an activematrix EL panel in which a dummy pixel is used for a TEG, as inEmbodiment Mode 2. This embodiment mode is described with reference toFIG. 7.

A pixel circuit in the pixel region 102 is provided with a data signalline 711, a gate signal line 712 intersecting with the data signal line711, a power source line 713 along the data signal line 711, a TFT 714,a TFT 715, and a capacitor 716. A light emitting element 717 isconnected to the TFT 715 of the pixel circuit.

The TFT 714 has a gate connected to the gate signal line 712, and asource and a drain of which one is connected to the data signal line 711and the other is connected to a gate electrode of the TFT 715 and oneelectrode of the capacitor 716. One of a source and a drain of the TFT715 is connected to the power source line 713, and the other isconnected the light emitting element 717. One electrode of the capacitor716 is connected to one of the source and the drain of the TFt 714, andthe other electrode of the capacitor 716 is connected to the powersource line 713.

The TEG 109 is provided with dummy pixels of n rows and m columns, eachincluding the same pixel circuit as a pixel provided in the pixel region102. In this embodiment mode, the number of rows of pixels is the sameas in the pixel region 102 and the number of columns is one. Note thatthe number of rows and columns of the dummy pixels used for the TEG 109is allowed as long as it is one or more and the number of rows andcolumns of the pixel region or less.

Each dummy pixel has a pixel circuit including a data signal line 701, agate signal line 702 intersecting with the data signal line 701, a powersource line 703 along the data signal line 701, a TFT 704, a TFt 705,and a capacitor 706.

The TFT 704 has a gate connected to the gate signal line 702, and asource and a drain of which one is connected to the data signal line 701and the other is connected to a gate electrode of the TFT 705 and oneelectrode of the capacitor 706. One of a source and a drain of the TFT705 is connected to the power source line 703, and the other has apotential which is not fixed and in a floating state. One electrode ofthe capacitor 706 is connected to one of the source and the drain of theTFT 704, and the other electrode of the capacitor 706 is connected tothe power source line 703.

In this embodiment mode, the TFT 704 of one of dummy pixels (a dummypixel of the first row and the first column in the figure) is connectedto the measurement terminal portion 110 for the purpose of measuringelectrical characteristics of the TEG 109. The gate, the source, and thedrain of the TFT 704 are connected to a different measurement terminalof the measurement terminal portion 110 through a wiring led to themeasurement terminal portion 110 which is provided outside of thesealing region 103, respectively. The TFT 704 is not connected to thedata signal line 701 but connected to only the measurement terminal.

Further, as shown in FIGS. 3C and 3D, it is also preferable that the TFT704 be connected to the measurement terminal portion 110 sinceelectrical characteristics can be measured ignoring wiring resistance.

The gate signal line 702 of each row of the TEG 109 is electricallyconnected to the gate signal line 712 in the pixel region 102 through aswitch 708. A structure of the switch 708 is not limited as long as itcan switch between a conductive state and a nonconductive state. Forexample, an analog switch can be provided as the switch 708. On theother hand, the data signal line 701 and the power source line 703 arewirings to which a signal or a potential is not externally supplied, andwhich are not connected to a wiring, an electrode, a terminal, or thelike outside of the TEG 109.

In this embodiment mode, the switch 708 is interposed between the pixelregion 102 and the gate signal line 702 of the dummy pixel so that itcan appropriately switch to electrically connect/disconnect the gatesignal line 712 in the pixel region 102 and the gate signal line 702 ofthe TEG 109 in accordance with whether electrical characteristics of theTEG 109 are measured or not.

In the case of measuring the electrical characteristics of the TEG 109,the gate signal line 702 of a row including an element connected to themeasurement terminal portion 110 among the gate signal lines 702 of theTEG 109 is electically connected to the gate signal line 712 in thepixel region 102 of a corresponding row by the switch 708, and the gatesignal lines 702 of the other rows are electrically disconnected to thegate signal lines 712 by the switch 708. Further, the electricalcharacteristics of the element of the TEG 109 can be measured moresimilarly to the pixel circuit in the pixel region 102 than when thegate signal line 702 is not connected to the gate signal line 712. Thepixel circuit in the pixel region 102 is prevented from having a defectwhile the electrical characteristics of the TEG 109 are measured.

It is preferable that the gate signal line 702 of the TEG 109 beelectrically disconnected to all of the gate signal lines 712 in thepixel region 102 when the electrical characteristics of the TEG 109 arenot measured or when an EL panel is used. This is because one of thesource and the drain of the TFT 705 is in a floating state. If the gatesignal line 712 in the pixel region 102 and the gate signal line 702 ofthe TEG 109 are electrically connected to each other when the electricalcharacteristics of the TEG 109 are not measured, a display defect may begenerated depending on a potential of the gate, the source, and thedrain of the TFT 705.

Although electrical characteristics of only the TFT 704 are measured inthe TEG 109 of this embodiment mode, the TFT 705 may be measured asdescribed in Embodiment Mode 2. Further, the capacitor 706 may bemeasured as described in Embodiment Mode 1. In addition, although a TFTin the dummy pixel of the first row and the first column is measured, aposition of the dummy pixel to be measured is not limited to theposition. A plurality of dummy pixels may be measured. All the gatesignal lines 702 are not necessarily provided with the switch 708. Thegate signal line 702 of a row, which is provided with an elementconnected to the measurement terminal portion 110, and the gate signalline 712 of the corresponding row are appropriately switched to beelectrically connected/disconnected by the switch 708, and the gatesignal lines 702 of the other rows can also be electrically disconnectedto an external wiring, electrode, terminal, or the like, similarly tothe data signal lines 701.

Embodiment Mode 4

In this embodiment mode, description is made of an example of an activematrix EL panel in which a dummy pixel is used for a TEG, as inEmbodiment Mode 2. This embodiment mode is described with reference toFIG. 8.

As shown in FIG. 8, the TEG 109 is provided in the vapor depositionregion 101 outside of the pixel region 102. In this embodiment mode,dummy pixels of n rows and m columns (here, two rows and two columns)are provided as the TEG 109. Note that the number of rows and columns ofthe dummy pixels used for the TEG 109 is allowed as long as it is one ormore and the number of rows and columns of the pixel region or less.

A pixel circuit of a pixel and a dummy pixel of this embodiment mode hasthe same structure as that of Embodiment Mode 2. The dummy pixel of theTEG 109 includes a data signal line 801, a gate signal line 802, a powersource line 803, TFTs 804 and 805, and a capacitor 806.

In this embodiment mode, an output of a buffer 807 is connected to thegate signal line 802 of the first row of the TEG 109. An input of thebuffer 807 is set to a ground potential (GND), and a positive potentialVcc is inputted from a terminal 808. The buffer 807 only needs to beprovided outside of the vapor deposition region 101. In FIG. 8, thebuffer 807 is provided in the sealing region 103 similarly to the drivercircuits 106 and 107. The terminal 808 is provided in the terminalportion 108.

Further, the other wirings (the gate signal lines 802 of the second rowand the subsequent rows, the data signal line 801, and the power sourceline 803) of the gate signal line 802 connected to the buffer 807 arenot connected to a wiring, an electrode, a terminal, or the like outsideof the TEG 109, and a signal or a potential is not externally suppliedto the other wirings.

In this embodiment mode, the TFT 804 of a dummy pixel in a row, which isconnected to the buffer 807 (a dummy pixel of the first row and thefirst column in FIG. 8) is connected to the measurement terminal portion110. The gate, the source, and the drain of the TFT 804 are connected toa different measurement terminal of the measurement terminal portion 110through a wiring led to the measurement terminal portion 110 which isprovided outside of the sealing region 103, respectively. Note that inthe dummy pixel connected to the measurement terminal portion 110, aterminal of the TFT 804, which is connected to the data signal line 801,is connected to only the measurement terminal.

Further, as shown in FIGS. 3C and 3D, it is also preferable that the TFT804 be connected to the measurement terminal portion 110 sinceelectrical characteristics can be measured ignoring wiring resistance.

The buffer 807 is provided, whereby a certain potential (positivepotential Vcc) is always outputted from the buffer 807 to the gatesignal line 802 of the first row in a dummy pixel. Electricalcharacteristics of the TFT 804 can be measured more similarly to thepixel circuit in the pixel region 102 than when a potential is notapplied to the gate signal line 802. Therefore, the buffer 807preferably has the same structure as that of a buffer in the last stageof the gate signal line driver circuit 107.

Although only the TFT 804 in the dummy pixel is measured in thisembodiment mode, the invention is not limited to the TFT 804. The TFT805 may be measured as described in Embodiment Mode 2, or the capacitor806 may be measured as described in Embodiment Mode 1.

Embodiment Mode 5

In this embodiment mode, the TEGs 109 are provided in a plurality ofportions in the vapor deposition region 101, whereby electricalcharacteristics distribution of the TEG 109 can be measured inaccordance with the position of the vapor deposition region 101.

As shown in FIG. 9, TEGs 901, 902, 903, and 904 are arranged in fourcomers of the vapor deposition region 101. The measurement terminalportions 110 are provided in two portions so that a wiring forconnecting the TEGs 901, 902, 903, and 904 to the measurement terminalis made short. The wiring is led from electrodes of the TEGs 901, 902,903, and 904 to the measurement terminal portion 110 provided outside ofthe sealing region 103, and connected to the measurement terminals. Bymeasuring the electrical characteristics of the TEGs 901, 902, 903, and904, electrical characteristics distribution of the element provided inthe pixel region 102 depending on a position can be quantitativelymeasured.

In the case where a wiring for connecting the TEG 902 and themeasurement terminal portion 110 overlaps the gate signal line drivercircuit 107 as shown in FIG. 9, an insulating layer is required to beprovided so that the wiring is not short-circuited with an electrode ora wiring of the gate signal line driver circuit 107. As this insulatinglayer, a common insulating layer to a partition wall for providing alight emitting element in the pixel region 102 may be used.

In Embodiment Modes 1 to 5, the leading distance of a wiring forconnecting a TEG to the measurement terminal portion 110 is long in somecases, depending on a position where the TEG is provided. In thosecases, wiring resistance might become significanltly high, wherebyelectrical characteristics of the TEG cannot be accurately measured.

When a TFT in a TEG is measured, a source and a drain of the TFTprovided in the TEG are connected to two measurement terminalsrespectively, as described in Embodiment Mode 1. Thus, electricalcharacteristics of the TFT can be measured ignoring wiring resistance(see FIGS. 3C and 3D). When a capacitor is measured, a wiring isadditionally provided so that parasitic capacitance thereof can bemeasured as described in Embodiment Mode 1. Then, the parasiticcapacitance is subtracted from capacitance of the capacitor, which ismeasured by the TEG, whereby the capacitance of the capacitor can beobtained accurately.

Although description is made of an example in which a light emittingelement is not provided in a TEG in Embodiment Modes 1 to 5, a lightemitting element may be provided. In the case of providing a lightemitting element in a TEG, it is preferable to shield light so thatlight from the light emitting element in the TEG does not leak tooutside of an EL panel.

Embodiment 1

An EL panel to which the invention is applied is preferably used for adisplay portion of an electronic appliance which drives with a battery,display portions of a display device and an electronic appliance with alarge display screen, or the like. For example, a television device(television or television receiver), a camera such as a digital cameraor a digital video camera, a mobile phone, a portable informationterminal such as a PDA, a portable game machine, a monitor, a computer,an audio reproducing device such as a car audio system, an imagereproducing device provided with a recording medium, such as a home gamemachine, and the like are given. Specific examples thereof are describedwith reference to FIGS. 10A to 10F.

A portable information terminal shown in FIG. 10A includes a body 9201,a display portion 9202, and the like. A display device of the inventioncan be applied to the display portion 9202.

A digital video camera shown in FIG. 10B includes a display portion9701, a display portion 9702, and the like. A display device of theinvention can be applied to the display portion 9701.

A mobile phone shown in FIG. 10C includes a body 9101, a display portion9102, and the like. A display device of the invention can be applied tothe display portion 9102.

A portable television device shown in FIG. 10D includes a main body9301, a display portion 9302, and the like. A display device of theinvention can be applied to the display portion 9302. Accordingly, aportable television device preventing a film of a partition wall frombeing peeled can be provided. The display device of the invention can bewidely applied to various television devices such as a small-sized onemounted on a portable terminal such as a mobile phone, a medium-sizedone which is portable, and a large-sized one (for example, 40 inches ormore in size).

A mobile computer shown in FIG. 10E includes a body 9401, a displayportion 9402, and the like. A display device of the invention can beapplied to the display portion 9402.

A television device shown in FIG. 10F includes a body 9501, a displayportion 9502, and the like. A display device of the invention can beapplied to the display portion 9502.

Further, a semiconductor device of the invention is not limited to adisplay portion, and can be used as a lighting device since a lightemitting element is provided in a pixel.

This application is based on Japanese Patent Application Serial No.2006-022074 filed in Japan Patent Office on Jan. 31, 2006, the entirecontents of which are hereby incorporated by reference.

1-9. (canceled)
 10. A display device comprising: a substrate including afirst vapor deposition region and a second vapor deposition regioninside the first vapor deposition region, wherein the second vapordeposition region has at least four corners; a pixel including a firstthin film transistor, and provided in the second vapor depositionregion; and at least four test element groups each including a secondthin film transistor, each of the at least four test element groupsprovided adjacent to each of the at least four corners, and providedoutside the second vapor deposition region and inside the first vapordeposition region.
 11. A display device according to claim 10, whereinthe each of the at least four test element groups contains threemeasurement terminals.
 12. A display device according to claim 10,wherein the display device is at least one selected from the groupconsisting of a portable information terminal, a camera, a mobile phone,a television, and a mobile computer.
 13. A display device comprising: asubstrate including a first vapor deposition region and a second vapordeposition region inside the first vapor deposition region, wherein thesecond vapor deposition region has at least four corners; a pixelincluding a first thin film transistor, and provided in the second vapordeposition region; at least four test element groups each including asecond thin film transistor, each of the at least four test elementgroups provided adjacent to each of the at least four corners, andprovided outside the second vapor deposition region and inside the firstvapor deposition region; and an electro-luminescence layer formed overthe first thin film transistor and the second thin film transistor. 14.A display device according to claim 13, wherein the each of the at leastfour test element groups contains three measurement terminals.
 15. Adisplay device according to claim 13, wherein the electro-luminescencelayer is formed by a vapor deposition.
 16. A display device according toclaim 13, wherein the display device is at least one selected from thegroup consisting of a portable information terminal, a camera, a mobilephone, a television, and a mobile computer.
 17. A display devicecomprising: a substrate including a first vapor deposition region and asecond vapor deposition region inside the first vapor deposition region,wherein the second vapor deposition region has at least four corners; apixel including a first thin film transistor, and provided in the secondvapor deposition region; at least four test element groups eachincluding a second thin film transistor, each of the at least four testelement groups provided adjacent to each of the at least four corners,and provided outside the second vapor deposition region and inside thefirst vapor deposition region; and a driver circuit including a thirdthin film transistor formed over the substrate.
 18. A display deviceaccording to claim 17, wherein the each of the at least four testelement groups contains three measurement terminals.
 19. A displaydevice according to claim 17, wherein the driver circuit is provided ina sealing region.
 20. A display device according to claim 17, whereinthe display device is at least one selected from the group consisting ofa portable information terminal, a camera, a mobile phone, a television,and a mobile computer.
 21. A display device comprising: a substrateincluding a first vapor deposition region and a second vapor depositionregion inside the first vapor deposition region, wherein the secondvapor deposition region has at least four corners; a pixel including afirst thin film transistor, and provided in the second vapor depositionregion; at least four test element groups each including a second thinfilm transistor, each of the at least four test element groups providedadjacent to each of the at least four corners, and provided outside thesecond vapor deposition region and inside the first vapor depositionregion; an electro-luminescence layer formed over the first thin filmtransistor and the second thin film transistor; and a driver circuitincluding a third thin film transistor formed over the substrate.
 22. Adisplay device according to claim 21, wherein the each of the at leastfour test element groups contains three measurement terminals.
 23. Adisplay device according to claim 21, wherein the electro-luminescencelayer is formed by a vapor deposition.
 24. A display device according toclaim 21, wherein the driver circuit is provided in a sealing region.25. A display device according to claim 21, wherein the display deviceis at least one selected from the group consisting of a portableinformation terminal, a camera, a mobile phone, a television, and amobile computer.